Invention Description High-voltage power electronic devices require materials and designs that can handle large electric fields while maintaining low power loss and high efficiency. Traditional diode structures often face trade-offs between breakdown voltage, leakage current, and on-resistance, limiting their performance in demanding applications....

Background Gallium oxide (Ga2O3) is an ultra-wide band gap semiconductor that has potential to be useful in power switching and high-frequency power amplifying devices. However, all current dry etching recipes in Ga2O3 have been found to cause significant subsurface damage, resulting in charge depletion. Additionally, wet etching recipes for Ga2O3...