Background GaN-based power electronics has been under extensive research due to GaN’s large bandgap, high breakdown electric field (Eb), and large Baliga’s figure of merit (BFOM). With the availability of high-quality bulk GaN substrates, GaN vertical devices have become prominent candidates for next-generation power applications, capable...

Background Conventional Si-based metal-oxide-semiconductor field-effect transistors (MOSFETs) are facing fundamental limitations as demands for increased power efficiency and integration density persist. The Boltzmann limit represents the minimum subthreshold change in gate voltage bias (VGS), 60 mV, required to effectuate a one-decade change in the...