Compartmentalization increases the overall activity and specificity of encapsulated enzymes by protecting the enzymes, maintaining a high concentration of enzymes and substrates, and promoting substrate channeling. While there have been artificial enzymatic particles that have been created using compartmentalization by virus-like proteins, liposomes,...

Background GaN-based power electronics has been under extensive research due to GaN’s large bandgap, high breakdown electric field (Eb), and large Baliga’s figure of merit (BFOM). With the availability of high-quality bulk GaN substrates, GaN vertical devices have become prominent candidates for next-generation power applications, capable...

Background Due to GaN’s large bandgap, high breakdown electric field (Eb), and large Baliga’s figure of merit (BFOM), GaN-based power electronics have attracted interest for high-voltage, high-power, and efficient power conversion applications. High-voltage power diodes often demand termination techniques to mitigate the premature breakdown...

Background The wide-bandgap (WBG) semiconductor gallium nitride (GaN) has attracted considerable attention for efficient power conversion applications due to its large bandgap (3.4 eV), high breakdown electric field (~3.0 MV/cm) and high Baliga’s figure of merit (~1000 times larger than that of Si). Previously, due to the lack of native GaN substrates,...

Background Resistive random access memory (RRAM) has become one of the most promising memory types due to its scalability, low programming voltage, and fast write/read speeds. For large-capacity, nonvolatile memory applications, the cross-point (or crossbar) array is an attractive RRAM architecture. However, sneak paths—unintended currents flowing...

Background Conventional Si-based metal-oxide-semiconductor field-effect transistors (MOSFETs) are facing fundamental limitations as demands for increased power efficiency and integration density persist. The Boltzmann limit represents the minimum subthreshold change in gate voltage bias (VGS), 60 mV, required to effectuate a one-decade change in the...

Aluminum Nitride (AlN) Power Devices Background Wurtzite AIN has the largest bandgap (6.2 eV) among the wide bandgap semiconductor family including SiC (3.3 eV), GaN (3.4 eV), β-Ga2O3 (4.8 eV) and diamond (5.5 eV), which are attractive for various optoelectronic and electronic applications. However, due to the challenges in material growth and...