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  1. High-Voltage AlN MESFET on Single-Crystal AlN Substrates
    Invention Description Ultrawide bandgap materials (UWGP) like Ga₂O₃, diamond, and aluminum nitride (AlN) are promising for next generation high voltage, high temperature electronics due to their superior properties. AlN with its wide 6.2 eV bandgap and high 12 MV/cm breakdown field, is particularly attractive for high power applications. However, its...
    Published: 11/21/2025
    Inventor(s): Houqiang Fu, Bingcheng Da, Dinusha Herath Mudiyanselage
    Keywords(s): Device, Electric Power Engineering, Electronics, Semiconductor Processing
    Category(s): Semiconductors, Materials & Processes, Semiconductor Devices, Physical Science, Microelectronics, Manufacturing/Construction/Mechanical, Advanced Materials/Nanotechnology

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