Invention Description Ultrawide bandgap materials (UWGP) like Ga₂O₃, diamond, and aluminum nitride (AlN) are promising for next generation high voltage, high temperature electronics due to their superior properties. AlN with its wide 6.2 eV bandgap and high 12 MV/cm breakdown field, is particularly attractive for high power applications. However, its...

Invention Description The demand for advanced thin-film deposition techniques has grown substantially in recent years, driven by the development of next-generation electronic, optoelectronic, and energy devices. Traditional deposition methods, such as chemical vapor deposition, molecular beam epitaxy, and physical vapor deposition, have well-established...

Invention Description The semiconductor industry has long relied on thermoset polymers for their superior thermal and mechanical stability in advanced packaging applications such as capillary underfills (CUFs), molded underfills (MUFs), and over-mold compounds. However, as devices evolve toward complex multidie 2D, 2.5D, and 3D architectures, traditional...

Background As more large-scale solar arrays (utility-scale) are connected to the energy grid, predicting solar irradiance (e.g., the amount of sunlight hitting the panels) becomes crucial for accurately forecasting the power of these photovoltaic (PV) arrays. This is because solar power generation is highly dependent on sunlight, which is variable...