Invention Description Ultrawide bandgap materials (UWGP) like Ga₂O₃, diamond, and aluminum nitride (AlN) are promising for next generation high voltage, high temperature electronics due to their superior properties. AlN with its wide 6.2 eV bandgap and high 12 MV/cm breakdown field, is particularly attractive for high power applications. However, its...

Invention Description The demand for advanced thin-film deposition techniques has grown substantially in recent years, driven by the development of next-generation electronic, optoelectronic, and energy devices. Traditional deposition methods, such as chemical vapor deposition, molecular beam epitaxy, and physical vapor deposition, have well-established...

Invention Description The semiconductor industry has long relied on thermoset polymers for their superior thermal and mechanical stability in advanced packaging applications such as capillary underfills (CUFs), molded underfills (MUFs), and over-mold compounds. However, as devices evolve toward complex multidie 2D, 2.5D, and 3D architectures, traditional...

Invention Description Gallium Nitride (GaN) is a wide bandgap semiconductor that has gained significant attention in recent years specifically for use in RF and power electronics due to its excellent material properties and better performance compared to traditional silicon (Si) devices. GaN based lateral high electron mobility transistors (HEMTs)...

Perovskite materials, especially hybrid metal halide perovskite (MHP), have garnered significant attention because of their potential in the field of solar cells. However, the further development of perovskite materials has been plagued by their stability challenges. Because of the “soft” ionic nature of the lattice while being brittle and...

The industry of perovskite materials has been highly sought out for next generation technology and devices. Perovskite thin films have been used in a large array of applications including light-emitting diodes (LEDs), solar cells, lasers and photodetectors. However, within recent years the widely existing defects (from significant intrinsic point defects...

-collapse: collapse; } Solid-state nanopores are attractive because of their low cost and broad potential utility from single-molecule bioanalytical sensing to diagnostics and sequencing of DNA and protein molecules. Unfortunately, conventional use of conductive silicon substrates results in high capacitive noise, significantly limiting sensing accuracy...

Background Aluminum nitride (AlN) has been studied in recent years as an ultra-wide bandgap semiconductor for next-generation high-voltage and high-temperature electronics. The ultra-wide bandgap and large critical breakdown of AlN enables these applications, but the development of AlN-based electronic devices faces many challenges. The controllable...

Next-generation sequencing (NGS) technologies have revolutionized genomics research because they enable faster, cheaper and accurate decoding of nucleotide sequences. This has resulted in breakthroughs in diagnostics, disease risk assessment, personalized medicines, screening and more. However, despite all the NGS-related advancements that have been...

Inverters are devices typically used in solar power generation systems to convert electric current to a more useful type, but are prone to failure and are the main cause of malfunction in solar power systems. Using transformer-less (TL) inverters is a desirable alternative because of their higher efficiency, lower size, and lower cost. However, TL inverters...